HUF75545P3, HUF75545S3, HUF75545S3S
Data Sheet
September 2002
75A, 80V, 0.010 Ohm, N-Channel,
®
UltraFET Power MOSFET
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
DRAIN
(FLANGE)
Features
SOURCE
DRAIN
GATE
• Ultra Low On-Resistance
- r
= 0.010Ω, VGS = 10V
DS(ON)
• Simulation Models
GATE
SOURCE
- Temperature Compensated PSPICE® and SABER™
Electrical Models
DRAIN
(FLANGE)
HUF75545S3S
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
HUF75545P3
JEDEC TO-262AA
SOURCE
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
DRAIN
DRAIN
(FLANGE)
GATE
Ordering Information
HUF75545S3
PART NUMBER
HUF75545P3
PACKAGE
TO-220AB
BRAND
75545P
Symbol
D
S
HUF75545S3
TO-262AA
TO-263AB
75545S
75545S
HUF75545S3S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75545S3ST.
G
o
Absolute Maximum Ratings
T
= 25 C, Unless Otherwise Specified
C
HUF75545P3, HUF75545S3,
HUF75545S3S
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
80
80
V
V
V
DSS
Drain to Gate Voltage (R
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±20
GS
Drain Current
o
Continuous (T = 25 C, V
C
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
75
73
A
A
GS
D
D
o
Continuous (T = 100 C, V
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C
GS
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Figure 4
Figure 6
270
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
W
D
o
o
Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.8
W/ C
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
J
-55 to 175
C
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
o
300
260
C
C
L
o
pkg
NOTES:
1. T = 25 C to 150 C.
o
o
J
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2002 Fairchild Semiconductor Corporation
HUF75545P3 / HUF75545S3 / HUF75545S3S Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
