Bootstrap Diode Part
Symbol
Parameter
Conditions
Min. Typ. Max. Units
VF
trr
Forward Voltage
IF = 0.1A, TC = 25°C
-
-
2.5
80
-
-
V
Reverse Recovery Time
IF = 0.1A, TC = 25°C
ns
Built in Bootstrap Diode VF-IF Characteristic
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
TC=25℃
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
VF [V]
Note:
6. Built in bootstrap diode includes around 15Ω resistance characteristic.
Figure 6. Built in Bootstrap Diode Characteristics
Recommended Operating Conditions
Value
Symbol
Parameter
Conditions
Units
Min.
-
Typ. Max.
VPN
VCC
VBS
Supply Voltage
Applied between P - NU, NV, NW
300
15
400
16.5
18.5
V
V
V
Control Supply Voltage
High-side Bias Voltage
Applied between VCC(H), VCC(L)- COM
13.5
13.0
Applied between VB(U) - VS(U), VB(V) - VS(V)
,
15
VB(W) - VS(W)
dVCC/dt, Control supply variation
dVBS/dt
-1
-
-
-
1
-
V/μs
μs
tdead
Blanking Time for Preventing For Each Input Signal
2.0
Arm-short
fPWM
VSEN
PWM Input Signal
Voltage for Current Sensing
-40°C ≤ TC ≤ 125°C, -40°C ≤ TJ ≤ 150°C
-
20
4
kHz
V
Applied between NU, NV, NW - COM
(Including surge voltage)
-4
8
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FSBB30CH60C Rev. D
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
