FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
※
Notes :
1. V
GS
= 10 V
2. I
D
= 6.5 A
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250 µA
0.5
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 9-1. Maximum Safe Operating Area
for FQP13N50CF
10
3
Figure 9-2. Maximum Safe Operating Area
for FQPF13N50CF
Operation in This Area
is Limited by R
DS(on)
10
3
10
2
Operation in This Area
is Limited by R
DS(on)
10
µ
s
1
10
2
I
D
, Drain Current [A]
10
10
0
1ms
10ms
100ms
DC
I
D
, Drain Current [A]
100
µ
s
10
µ
s
100
µ
s
10
1
1ms
10ms
100ms
10
0
DC
* Notes :
o
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
10
-1
* Notes :
o
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
10
-1
10
-2
10
0
10
1
10
2
10
3
10
-2
V
DS
, Drain-SourceVoltage[V]
10
0
10
1
10
2
10
3
V
DS
, Drain-SourceVoltage[V]
Figure 10. Maximum Drain Current
vs. Case Temperature
14
12
I
D
, Drain Current [A]
10
8
6
4
2
0
25
50
75
100
125
150
T
C
, Case Temperature [
℃
]
FQP13N50CF / FQPF13N50CF Rev. A1
4
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