FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FQP13N50CF
FQPF13N50CF
Device
FQP13N50CF
FQPF13N50CF
Package
TO-220
TO-220F
T
C
= 25°C unless otherwise noted
Reel Size
-
-
Tape Width
-
-
Quantity
50
50
Electrical Characteristics
Symbol
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Conditions
V
GS
= 0V, I
D
= 250µA, T
J
= 25°C
I
D
= 250µA, Referenced to 25°C
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, T
C
= 125°C
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 6.5A
V
DS
= 40V, I
D
= 6.5A
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
(Note 4)
Min
500
--
--
--
--
--
2.0
--
--
--
--
--
Typ
--
0.5
--
--
--
--
--
0.43
15
1580
180
20
25
100
130
100
43
7.5
18.5
--
--
--
100
0.35
Max Units
--
--
10
100
100
-100
4.0
0.54
--
2055
235
25
60
210
270
210
56
--
--
13
52
1.4
160
--
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
µC
On Characteristics
Dynamic Characteristics
Switching Characteristics
V
DD
= 250V, I
D
= 13A
R
G
= 25Ω
(Note 4, 5)
--
--
--
--
--
--
(Note 4, 5)
V
DS
= 400V, I
D
= 13A
V
GS
= 10V
--
--
--
--
--
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
= 13A
V
GS
= 0V, I
S
= 13A
dI
F
/dt =100A/µs
(Note 4)
--
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5.6mH, I
AS
= 13A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
13A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test: Pulse width
≤
300µs, Duty Cycle
≤
2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FQP13N50CF / FQPF13N50CF Rev. A1
2
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
