FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET
May 2006
FRFET
F
QP13N50CF / FQPF13N50CF
500V N-Channel MOSFET
Features
• 13A, 500V, R
DS(on)
= 0.54Ω @V
GS
= 10 V
• Low gate charge (typical 43 nC)
• Low Crss (typical 20pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode (typical 100ns)
TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
D
G
G DS
TO-220
FDP Series
GD S
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
FQP13N50CF
13
8
(Note 1)
FQPF13N50CF
500
13*
8*
52*
±
30
530
13
19.5
4.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
- Pulsed
52
195
1.56
-55 to +150
300
48
0.39
W
W/°C
°C
°C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FQP13N50CF
0.64
62.5
FQPF13N50CF
2.58
62.5
Unit
°C/W
°C/W
© 2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQP13N50CF / FQPF13N50CF Rev. A1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
