FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
1
I
D
, Drain Current [A]
I
D
, Drain Current [A]
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
10
1
150 C
-55 C
o
o
25 C
10
0
o
10
0
※
Notes :
1. 250µs Pulse Test
2. T
C
= 25
℃
※
Notes :
1. V
DS
= 40V
2. 250µs Pulse Test
10
-1
10
-1
-1
10
10
0
10
1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
R
DS(ON)
[Ω ],
Drain-Source On-Resistance
I
DR
, Reverse Drain Current [A]
1.5
V
GS
= 10V
10
1
1.0
10
0
V
GS
= 20V
0.5
※
Note : T
J
= 25
℃
150
℃
25
℃
-1
※
Notes :
1. V
GS
= 0V
2. 250µs Pulse Test
0
5
10
15
20
25
30
35
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
3000
V
GS
, Gate-Source Voltage [V]
2500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
V
DS
= 100V
10
V
DS
= 250V
V
DS
= 400V
C
iss
Capacitance [pF]
2000
8
1500
C
oss
6
1000
C
rss
500
※
Notes ;
1. V
GS
= 0 V
2. f = 1 MHz
4
2
※
Note : I
D
= 13A
0
-1
10
0
10
0
10
1
0
10
20
30
40
50
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
FQP13N50CF / FQPF13N50CF Rev. A1
3
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