FQP10N60C / FQPF10N60C 600V N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
0.9
* Notes :
1. V
GS
= 0 V
2. I
D
= 250
µ
A
0.5
* Notes :
1. V
GS
= 10 V
2. I
D
= 4.75 A
0.8
-100
-50
0
50
100
150
200
0.0
-100
-50
0
50
100
150
200
T
J
, Junction Temperature [
°
C]
T
J
, Junction Temperature [
°
C]
Figure 9-1. Maximum Safe Operating Area
for FQP10N60C
10
2
Figure 9-2. Maximum Safe Operating Area
for FQPF10N60C
2
Operation in This Area
is Limited by R
DS(on)
10
µ
s
100
µ
s
10
Operation in This Area
is Limited by R
DS(on)
10
µ
s
I
D
, Drain Current [A]
100
µ
s
I
D
, Drain Current [A]
10
1
1 ms
10 ms
100 ms
DC
10
1
10
0
1 ms
10 ms
100 ms
DC
10
0
* Notes :
1. T
C
= 25
°
C
2. T
J
= 150
°
C
3. Single Pulse
10
-1
* Notes :
1. T
C
= 25
°
C
2. T
J
= 150
°
C
3. Single Pulse
10
-1
10
0
10
1
10
2
10
3
10
-2
10
0
10
1
10
2
10
3
V
DS
, Drain-Source Voltage [V]
V
DS
, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
10
8
I
D
, Drain Current [A]
6
4
2
0
25
50
75
100
125
150
T
C
, Case Temperature [
°
C]
4
FQP10N60C / FQPF10N60C Rev. C
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
