FQP10N60C / FQPF10N60C 600V N-Channel MOSFET
April 2007
QFET
FQP10N60C / FQPF10N60C
600V N-Channel MOSFET
Features
• 9.5A, 600V, R
DS(on)
= 0.73Ω @V
GS
= 10 V
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
®
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
D
G
G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
Parameter
FQP10N60C
9.5
5.7
38
FQPF10N60C
600
9.5 *
5.7 *
38 *
±
30
Units
V
A
A
A
V
mJ
A
mJ
V/ns
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
700
9.5
15.6
4.5
156
1.25
-55 to +150
300
50
0.4
W
W/°C
°C
°C
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP10N60C
0.8
0.5
62.5
FQPF10N60C
2.5
--
62.5
Units
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQP10N60C / FQPF10N60C Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
