FQP10N60C / FQPF10N60C 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
10
1
10
1
I
D
, Drain Current [A]
I
D
, Drain Current [A]
150
°
C
25
°
C
10
0
-55
°
C
10
0
10
-1
* Notes :
1. 250
µ
s Pulse Test
2. T
C
= 25
°
C
* Notes :
1. V
DS
= 40V
10
-1
2. 250
µ
s Pulse Test
10
0
10
1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
2.0
R
DS(ON)
[
Ω
],
Drain-Source On-Resistance
I
DR
, Reverse Drain Current [A]
1.5
10
1
V
GS
= 10V
1.0
10
0
0.5
V
GS
= 20V
150
°
C
25
°
C
10
-1
* Notes :
1. V
GS
= 0V
2. 250
µ
s Pulse Test
* Note : T
J
= 25
°
C
0.0
0
5
10
15
20
25
30
35
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
3000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
Figure 6. Gate Charge Characteristics
12
2500
C
rss
= C
gd
10
V
DS
= 120V
V
DS
= 300V
C
iss
V
GS
, Gate-Source Voltage [V]
Capacitance [pF]
2000
8
V
DS
= 480V
1500
C
oss
6
1000
* Notes ;
1. V
GS
= 0 V
4
C
rss
500
2. f = 1 MHz
2
* Note : I
D
= 9.5A
0
-1
10
0
10
0
10
1
0
10
20
30
40
50
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
3
FQP10N60C / FQPF10N60C Rev. C
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
