FQP10N60C / FQPF10N60C 600V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FQP10N60C
FQPF10N60C
Device
FQP10N60C
FQPF10N60C
Package
TO-220
TO-220F
Reel Size
--
--
Tape Width
--
--
Quantity
50
50
Electrical Characteristics
Symbol
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
T
C
= 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
600
--
--
--
--
--
--
0.7
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= 10 V, I
D
= 4.75 A
V
DS
= 40 V, I
D
= 4.75 A
(Note 4)
2.0
--
--
--
0.6
8.0
4.0
0.73
--
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
1570
166
18
2040
215
24
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 480 V, I
D
= 9.5A,
V
GS
= 10 V
(Note 4, 5)
(Note 4, 5)
V
DD
= 300 V, I
D
= 9.5A,
R
G
= 25
Ω
--
--
--
--
--
--
--
23
69
144
77
44
6.7
18.5
55
150
300
165
57
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 14.2mH, I
AS
= 9.5 A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
9.5A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 9.5 A
V
GS
= 0 V, I
S
= 9.5 A,
dI
F
/ dt = 100 A/µs
(Note 4)
--
--
--
--
--
--
--
--
420
4.2
9.5
38
1.4
--
--
A
A
V
ns
µC
2
FQP10N60C / FQPF10N60C Rev. C
www.fairchildsemi.com
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