Typical Electrical And Thermal Characteristics
5
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 0.5A
V
DS
= 5V
10V
CAPACITANCE (pF)
150
100
4
15V
50
Ciss
Coss
3
2
20
10
f = 1 MHz
V
GS
= 0V
1
5
0.1
C rss
0
0.5
V
DS
1
2
5
10
25
0
0.4
0.8
1.2
1.6
2
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
5
3
I
D
, DRAIN CURRENT (A)
1
IT
LIM
N)
O
S(
RD
5
1m
s
10m
s
0m
POWER (W)
4
10
1s
SINGLE PULSE
R
θ
JA
=357° C/W
T
A
= 25°C
s
3
0.3
10
0.1
s
2
0.03
0.01
0.1
V
GS
= 4.5V
SINGLE PULSE
R
θ
JA
=357°C/W
T
A
= 25°C
0.2
0.5
1
2
DC
1
5
10
20
40
0
0.001
0.01
0.1
1
10
100
300
V
DS
, DRAI N-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P(pk)
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 357 °C/W
t
1
t
2
T
J
- T
A
= P * R
θ
JA(t)
Duty Cycle, D = t
1
/t
2
10
100
300
Figure 11. Transient Thermal Response Curve.
FDV303N Rev.D1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
