Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA, Referenced to 25
o
C
V
DS
= 20 V, V
GS
= 0 V
T
J
= 55°C
I
GSS
Gate - Body Leakage Current
(Note)
25
26
1
10
100
V
mV /
o
C
µA
µA
nA
mV /
o
C
1.5
0.45
0.8
0.6
A
1.45
S
V
∆
BV
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 8 V, V
DS
= 0 V
I
D
= 250 µA, Referenced to 25
o
C
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 4.5 V, I
D
= 0.5 A
T
J
=125°C
V
GS
= 2.7 V, I
D
= 0.2 A
0.65
-2.6
0.8
0.33
0.52
0.44
0.5
ON CHARACTERISTICS
∆
V
GS(th)
/
∆
T
J
V
GS(th)
R
DS(ON)
Gate Threshold Voltage Temp. Coefficient
Gate Threshold Voltage
Static Drain-Source On-Resistance
Ω
I
D(ON)
g
FS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
Note:
On-State Drain Current
Forward Transconductance
V
GS
= 2.7 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 0.5 A
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note)
50
28
9
pF
pF
pF
SWITCHING CHARACTERISTICS
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 6 V, I
D
= 0.5 A,
V
GS
= 4.5 V, R
GEN
= 50
Ω
3
8.5
17
13
6
18
30
25
2.3
ns
ns
ns
ns
nC
nC
nC
V
DS
= 5 V, I
D
= 0.5 A,
V
GS
= 4.5 V
1.64
0.38
0.45
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.5 A
(Note)
0.3
0.83
1.2
A
V
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDV303N Rev.D1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
