Typical Electrical Characteristics
1.5
2
R
DS(on)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
, DRAIN-SOURCE CURRENT (A)
1.2
V
GS
= 4.5V
3.5
3.0
2.7
2.5
2.0
V
GS
= 2.0V
1.5
0.9
2.5
2.7
3.0
3.5
4.5
0.6
1
0.3
1.5
0
0.5
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
DRAIN-SOURCE ON-RESISTANCE
2
I
D
=0.5 A
R
DS(on)
, ON-RESISTANCE (OHM)
ID= 0.5A
1.6
R
DS(ON)
, NORMALIZED
1.4
V
GS
= 4.5 V
1.2
1.2
1
0.8
125°C
0.4
0.8
25°C
0.6
-50
0
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
1
1.5
2
2.5
3
3.5
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
4.5
5
Figure 3.
On-Resistance Variation
with Temperature.
Figure 4.
On Resistance Variation with
Gate-To- Source Voltage.
1
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5.0V
I
D
, DRAIN CURRENT (A)
0.8
T = -55°C
J
25°C
125°C
1
V
GS
= 0V
0.1
TJ = 125°C
25°C
0.6
0.4
0.01
-55°C
0.2
0.001
0
0
0.5
1
1.5
2
2.5
0.0001
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6.
Body Diode Forward Voltage
Variation with Source Current and Temperature.
FDV303N Rev.D1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
