Typical Characteristics TJ = 25°C unless otherwise noted
4.5
ID = -4.9A
4.0
3000
1000
Ciss
3.5
VDD = -5V
3.0
2.5
VDD = -10V
Coss
2.0
VDD = -15V
100
10
1.5
Crss
1.0
0.5
0.0
f = 1MHz
= 0V
V
GS
0
2
4
6
8
10
12
0.1
1
10
20
Q , GATE CHARGE(nC)
g
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
105
104
103
102
101
100
10-1
10-2
10-3
10-4
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
8
6
VGS = 0V
4
TJ = 25oC
TJ = 125oC
TJ = 125oC
2
TJ = 25oC
1
0.01
0.1
1
10
30
0
4
8
12
16
tAV, TIME IN AVALANCHE(ms)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Gate Leakage Current
vs Gate to Sourse Voltage
50
10
100
10
VGS = -10V
100µs
1ms
1
0.1
10ms
THIS AREA IS
100ms
LIMITED BY r
DS(on)
1s
SINGLE PULSE
TJ = MAX RATED
10s
DC
SINGLE PULSE
RθJA = 135oC/W
R
θJA = 135oC/W
1
TA = 25oC
T
A = 25oC
0.01
0.5
0.1
1
10
50
10-3
10-2
10-1
t, PULSE WIDTH (s)
100
101
100
1000
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
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FDS9933BZ Rev.C
4
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