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FDS9933BZ 参数 Datasheet PDF下载

FDS9933BZ图片预览
型号: FDS9933BZ
PDF下载: 下载PDF文件 查看货源
内容描述: 双P沟道2.5V指定的PowerTrench MOSFET ™ [Dual P-Channel 2.5V Specified PowerTrench㈢ MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲光电二极管
文件页数/大小: 6 页 / 292 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
 浏览型号FDS9933BZ的Datasheet PDF文件第1页浏览型号FDS9933BZ的Datasheet PDF文件第2页浏览型号FDS9933BZ的Datasheet PDF文件第4页浏览型号FDS9933BZ的Datasheet PDF文件第5页浏览型号FDS9933BZ的Datasheet PDF文件第6页  
Typical Characteristics TJ = 25°C unless otherwise noted  
30  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
VGS = -4.5V  
PULSE DURATION = 80µs  
DUTY CYCLE = 0.5%MAX  
25  
20  
15  
10  
5
VGS = -3V  
VGS = -3.5V  
VGS = -2V  
VGS = -2.5V  
VGS = -2.5V  
VGS = -3V  
VGS = -2V  
PULSE DURATION = 80µs  
DUTY CYCLE = 0.5%MAX  
VGS = -4.5V  
25  
VGS = -3.5V  
0
0
1
2
3
4
0
5
10  
15  
20  
30  
-VDS, DRAIN TO SOURCE VOLTAGE (V)  
-ID, DRAIN CURRENT(A)  
Figure 1. On-Region Characteristics  
Figure2. N o r m a l i z e d O n - R e s i s ta n c e  
vs Drain Current and Gate Voltage  
1.6  
250  
ID = -4.9A  
GS = -4.5V  
PULSE DURATION = 80µs  
V
DUTY CYCLE = 0.5%MAX  
1.4  
1.2  
1.0  
0.8  
0.6  
200  
150  
100  
50  
ID = -4.9A  
TJ = 125oC  
TJ = 25oC  
0
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
-75 -50 -25  
0
25 50 75 100 125 150  
TJ, JUNCTION TEMPERATURE (oC)  
-VGS, GATE TO SOURCE VOLTAGE (V)  
F i gu re 3 . N orma li zed On - Res is ta nc e  
vs Junction Temperature  
Figure4. On-Resistance vs Gate to  
Source Voltage  
30  
100  
PULSE DURATION = 80µs  
DUTY CYCLE = 0.5%MAX  
VGS = 0V  
25  
20  
15  
10  
5
10  
1
VDS = -5.0V  
TJ = 150oC  
TJ = 25oC  
0.1  
TJ = 150oC  
TJ = 25oC  
TJ = -55oC  
0.01  
TJ = -55oC  
2.0 2.5  
-VGS, GATE TO SOURCE VOLTAGE (V)  
0
0.5  
1E-3  
1.0  
1.5  
3.0  
3.5  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
-VSD, BODY DIODE FORWARD VOLTAGE (V)  
Figure 5. Transfer Characteristics  
Figure6. Source to Drain Diode  
Forward Voltage vs Source Current  
www.fairchildsemi.com  
©2008 Fairchild Semiconductor Corporation  
FDS9933BZ Rev.C  
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