Typical Characteristics TJ = 25°C unless otherwise noted
30
3.0
2.5
2.0
1.5
1.0
0.5
VGS = -4.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
25
20
15
10
5
VGS = -3V
VGS = -3.5V
VGS = -2V
VGS = -2.5V
VGS = -2.5V
VGS = -3V
VGS = -2V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = -4.5V
25
VGS = -3.5V
0
0
1
2
3
4
0
5
10
15
20
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
250
ID = -4.9A
GS = -4.5V
PULSE DURATION = 80µs
V
DUTY CYCLE = 0.5%MAX
1.4
1.2
1.0
0.8
0.6
200
150
100
50
ID = -4.9A
TJ = 125oC
TJ = 25oC
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
30
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 0V
25
20
15
10
5
10
1
VDS = -5.0V
TJ = 150oC
TJ = 25oC
0.1
TJ = 150oC
TJ = 25oC
TJ = -55oC
0.01
TJ = -55oC
2.0 2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
0
0.5
1E-3
1.0
1.5
3.0
3.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
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©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
3