FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench
®
MOSFET
March 2008
FDS9933BZ
Dual P-Channel 2.5V Specified PowerTrench MOSFET
-20V, -4.9A, 46mΩ
Features
Max r
DS(on)
= 46mΩ at V
GS
= -4.5V, I
D
= -4.9A
Max r
DS(on)
= 69mΩ at V
GS
= -2.5V, I
D
= -4.0A
Low gate charge (11nC typical).
High performance trench technology for extremely low r
DS(on).
HBM ESD protection level >3kV (Note 3).
RoHS Compliant
®
tm
General Description
These P-Channel 2.5V specified MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
®
process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
These devices are well suited for portable electronics
applications: load switching and power management, battery
charging and protection circuits.
Applications
Battery Charging
Load Switching
D2
D2
D1
D1
G2
S2
G1
Pin 1
SO-8
S1
D1
8
D2
D2
D1
5
6
7
Q2
Q1
Q2
Q1
4
3
2
1
G2
S2
G1
S1
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
I
D
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1b)
T
A
= 25°C
(Note 1a)
Parameter
Ratings
-20
±12
-4.9
-30
1.6
0.9
-55 to +150
Units
V
V
A
W
°C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
40
78
°C/W
Package Marking and Ordering Information
Device Marking
FDS9933BZ
Device
FDS9933BZ
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
