Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250µA, VGS = 0V
-20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250µA, referenced to 25°C
-9
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = -16V, VGS = 0V
VGS = ±12V, VDS = 0V
1
µA
µA
±10
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250µA
-0.4
-0.9
3
-1.5
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250µA, referenced to 25°C
mV/°C
VGS = -4.5V, ID = -4.9A
38
54
52
17
46
69
67
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = -2.5V, ID = -4.0A
mΩ
VGS = -4.5V, ID = -4.9A, TJ = 125°C
VDD = -10V, ID = -4.9A
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
740
160
145
985
215
220
pF
pF
pF
VDS = -10V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
6.7
9.3
59
14
19
95
76
15
ns
ns
VDD = -10V, ID = -4.9A,
VGS = -4.5V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
ns
47
ns
Qg
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
11
nC
nC
nC
VDD = -10V, ID = -4.9A
VGS = -4.5V
Qgs
Qgd
1.4
3.7
Drain-Source Diode Characteristics
IS
Maximum continuous Drain-Sourse Diode Forward Current
-1.3
-1.2
74
A
V
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = -1.3A (Note 2)
-0.8
46
ns
nC
IF = -4.9A, di/dt = 100A/µs
Qrr
Reverse Recovery Charge
23
37
NOTES:
2
1. R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
2
b) 135°C/W when mounted on a
minimun pad
a) 78°C/W when mounted on a 1 in
pad of 2 oz copper
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
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©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
2
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