Typical Characteristics
2000
1600
1200
800
400
0
10
f = 1 MHz
GS = 0 V
ID = -8.8A
V
8
Ciss
VDS = -10V
-20V
6
-15V
4
Coss
2
0
Crss
0
5
10
15
20
25
30
0
6
12
18
24
Qg, GATE CHARGE (nC)
30
36
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
SINGLE PULSE
RTJA = 125°C/W
TA = 25°C
RDS(ON) LIMIT
100 s
P
1ms
10ms
100ms
1s
1
DC
VGS = -10V
SINGLE PULSE
RTJA = 125oC/W
0.1
T
A = 25oC
0.01
0.01
0.1
-VDS, DRAIN-SOURCE VOLTAGE (V)
1
10
100
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RTJA(t) = r(t) * RTJA
RTJA = 125oC/W
0.2
0.1
0.1
0.05
0.02
P(pk)
t1
0.01
t2
J - TA = P * RTJA(t)
Duty Cycle, D = t1 / t2
0.01
T
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4935BZ Rev B1 (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
