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FDS4935BZ 参数 Datasheet PDF下载

FDS4935BZ图片预览
型号: FDS4935BZ
PDF下载: 下载PDF文件 查看货源
内容描述: 双30伏P沟道PowerTrench MOSFET [Dual 30 Volt P-Channel PowerTrench MOSFET]
分类和应用:
文件页数/大小: 5 页 / 154 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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Typical Characteristics  
50  
3
2.6  
2.2  
1.8  
1.4  
1
VGS = -10V  
-6.0V  
-5.0V  
VGS = -3.5V  
-4.5V  
40  
30  
20  
10  
0
-4.0V  
-4.0V  
-4.5V  
-5.0V  
-3.5V  
-6.0V  
-8.0V  
-10V  
-3.0V  
0.6  
0
10  
20 30  
-ID, DRAIN CURRENT (A)  
40  
50  
0
1
2
3
-VDS, DRAIN TO SOURCE VOLTAGE (V)  
4
Figure 1. On-Region Characteristics.  
Figure 2. On-Resistance Variation with  
Drain Current and Gate Voltage.  
0.08  
0.06  
0.04  
0.02  
0
1.6  
1.4  
1.2  
1
ID = -8.8A  
ID = -4.4A  
VGS = -10V  
TA = 125oC  
TA = 25oC  
0.8  
0.6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
2
4
-VGS, GATE TO SOURCE VOLTAGE (V)  
6
8
10  
TJ, JUNCTION TEMPERATURE (oC)  
Figure 3. On-Resistance Variation with  
Temperature.  
Figure 4. On-Resistance Variation with  
Gate-to-Source Voltage.  
100  
50  
VGS = 0V  
VDS = -5V  
10  
40  
30  
20  
10  
0
TA = 125oC  
1
0.1  
25oC  
-55oC  
TA = 125oC  
-55oC  
0.01  
0.001  
25oC  
2
2.5  
3
-VGS, GATE TO SOURCE VOLTAGE (V)  
3.5  
4
4.5  
5
0
0.4  
-VSD, BODY DIODE FORWARD VOLTAGE (V)  
0.8  
1.2  
1.6  
Figure 5. Transfer Characteristics.  
Figure 6. Body Diode Forward Voltage Variation  
with Source Current and Temperature.  
FDS4935BZ Rev B1 (W)