September 2006
tm
FDS4935BZ
Dual 30 Volt P-Channel PowerTrench MOSFET
General Description
Features
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
x –6.9 A, –30 V. RDS(ON) = 22 m: @ VGS = –10 V
RDS(ON) = 35 m: @ VGS = – 4.5 V
x Extended VGSS range (–25V) for battery applications
x ESD protection diode (note 3)
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
x High performance trench technology for extremely
low RDS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
x High power and current handling capability
D1
D
5
6
7
8
4
3
2
1
D1
D
D2
D
Q1
Q2
D2
D
G1
G
SO-8
S1
S
G2
S
S2
S
SO-8
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDS\
Parameter
Drain-Source Voltage
Ratings
–30
Units
V
VGS
ID
Gate-Source Voltage
+25
–6.9
V
A
Drain Current – Continuous
– Pulsed
(Note 1a)
–50
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
1.6
W
1.0
(Note 1c)
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
qC
Thermal Characteristics
RTJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
78
40
qC/W
qC/W
Thermal Resistance, Junction-to-Case
RTJC
Package Marking and Ordering Information
Reel Size
Device Marking
Device
Tape width
Quantity
FDS4935BZ
FDS4935BZ
13’’
12mm
2500 units
FDS4935BZ Rev B1 (W)
2006 Fairchild Semiconductor Corporation
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
