Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–30
V
VGS = 0 V,
ID = –250 PA
'BVDSS
ꢀꢀꢀ'TJ
IDSS
Breakdown Voltage Temperature
Coefficient
24
ID = –250 PA,Referenced to 25qC
mV/qC
Zero Gate Voltage Drain Current
Gate–Body Leakage
VDS = –24 V, VGS = 0 V
VGS = +25 V, VDS = 0 V
–1
PA
PA
IGSS
+10
On Characteristics
VGS(th)
(Note 2)
Gate Threshold Voltage
–1
–1.9
–5
–3
V
VDS = VGS, ID = –250 PA
'VGS(th)
ꢀꢀꢀ'TJ
rDS(on)
Gate Threshold Voltage
Temperature Coefficient
ID = –250 PA,Referenced to 25qC
mV/qC
m:
Static Drain–Source
On–Resistance
VGS = –10 V, ID = –6.9 A
18
27.5
26
22
35
34
V
GS = –4.5 V, ID = –5.3 A
VGS = –10 V, ID = –6.9A,TJ=125qC
VDS = –5 V, ID = –6.9 A
gFS
Forward Transconductance
22
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
1360
240
pF
pF
pF
VDS = –15 V, V GS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
200
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
12
13
68
38
29
16
4
22
23
ns
ns
VDD = –15 V, ID = –1 A,
VGS = –10 V, RGEN = 6 :
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
108
61
ns
ns
Qg(TOT)
Qg(TOT)
Qgs
Total Gate Charge, VGS = 10V
Total Gate Charge, VGS = 5V
Gate–Source Charge
Gate–Drain Charge
40
nC
nC
nC
nC
VDS = –15 V, ID = –6.9 A,
GS = –10 V
V
23
Qgd
7
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
–2.1
–1.2
A
V
VSD
VGS = 0 V, IS = –2.1 A (Note 2)
–0.8
tRR
IF = –8.8 A,
Reverse Recovery Time
24
9
ns
diF/dt = 100 A/µs
(Note 2)
QRR
Reverse Recovery Charge
nC
Notes:
1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design.
a) 78°C/W steady state
when mounted on a
1in2 pad of 2 oz
copper
b) 125°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300Ps, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDS4935BZ Rev B1 (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
