欢迎访问ic37.com |
会员登录 免费注册
发布采购

FDS4501HD84Z 参数 Datasheet PDF下载

FDS4501HD84Z图片预览
型号: FDS4501HD84Z
PDF下载: 下载PDF文件 查看货源
内容描述: [Small Signal Field-Effect Transistor, 9.3A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8]
分类和应用: 开关光电二极管晶体管
文件页数/大小: 11 页 / 1559 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
 浏览型号FDS4501HD84Z的Datasheet PDF文件第1页浏览型号FDS4501HD84Z的Datasheet PDF文件第2页浏览型号FDS4501HD84Z的Datasheet PDF文件第3页浏览型号FDS4501HD84Z的Datasheet PDF文件第4页浏览型号FDS4501HD84Z的Datasheet PDF文件第6页浏览型号FDS4501HD84Z的Datasheet PDF文件第7页浏览型号FDS4501HD84Z的Datasheet PDF文件第8页浏览型号FDS4501HD84Z的Datasheet PDF文件第9页  
FDS4501H
Typical Characteristics: Q2
5
I
D
= -2.4A
4
-15V
3
V
DS
= -5V
-10V
2000
f = 1MHz
V
GS
= 0 V
C
ISS
1600
1200
2
800
1
400
C
OSS
C
RSS
0
5
10
15
20
0
0
2
4
6
8
10
12
14
0
Q
g
, GATE CHARGE (nC)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
R
DS(ON)
LIMIT
10
10ms
1
DC
0.1
V
GS
=-4.5V
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
0.01
0.1
1
10
100
0
5
100ms
1s
10s
10
1ms
15
20
Figure 8. Capacitance Characteristics.
SINGLE PULSE
R
θ
JA
= 125°C/W
T
A
= 25°C
0.01
0.1
1
10
100
1000
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
FDS4501H Rev C(W)