Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
Q1
Q2
Q1
Q2
Q1
Q2
30
–20
V
Voltage
Breakdown Voltage
Temperature Coefficient
24
–13
DBVDSS
DTJ
mV/°C
IDSS
Zero Gate Voltage Drain
Current
1
–1
mA
VDS = –16 V, VGS = 0 V
IGSS
Gate-Body Leakage
VGS = +20 V, VDS = 0 V
VGS = +8 V, VDS = 0 V
Q1
Q2
+100
+100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
VDS = VGS, ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VGS = 10 V, ID = 9.3 A
Q1
Q2
Q1
Q2
1
1.6
3
V
–0.4 –0.7 –1.5
Gate Threshold Voltage
Temperature Coefficient
–4
3
14
21
17
DVGS(th)
DTJ
mV/°C
mW
RDS(on)
Static Drain-Source
On-Resistance
Q1
18
29
23
VGS = 10 V, ID = 9.3 A, TJ = 125°C
VGS = 4.5 V, ID = 7.6 A
Q2
36
49
47
46
80
63
VGS = –4.5 V, ID = –5.6 A
VGS = –4.5 V, ID = –5.6 A, TJ = 125°C
VGS = –2.5 V, ID = –5.0 A
VGS = 10 V, VDS = 5 V
ID(on)
gFS
On-State Drain Current
Q1
Q2
Q1
Q2
20
–20
A
S
VGS = –4.5 V, VDS = –5 V
Forward Transconductance VDS = 5 V, ID = 9.3 A
VDS = 5 V, ID = –5.6 A
28
16
Dynamic Characteristics
C
iss
Input Capacitance
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
Q1
Q2
Q1
Q2
Q1
Q2
1958
1312
424
240
182
106
pF
pF
pF
Coss
Output Capacitance
C
rss
Reverse Transfer Capacitance
FDS4501H Rev C(W)
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