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FDS4501HD84Z 参数 Datasheet PDF下载

FDS4501HD84Z图片预览
型号: FDS4501HD84Z
PDF下载: 下载PDF文件 查看货源
内容描述: [Small Signal Field-Effect Transistor, 9.3A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8]
分类和应用: 开关光电二极管晶体管
文件页数/大小: 11 页 / 1559 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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Electrical Characteristics (continued)  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Type Min Typ Max Units  
Switching Characteristics (Note 2)  
td(on)  
tr  
td(off)  
tf  
Turn-On Delay Time  
Turn-On Rise Time  
Turn-Off Delay Time  
Turn-Off Fall Time  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Q1  
Q1  
Q2  
Q1  
Q2  
Q1  
Q2  
Q1  
Q2  
Q1  
Q2  
Q1  
Q2  
Q1  
Q2  
15  
15  
5
27  
27  
10  
27  
61  
64  
20  
40  
27  
21  
ns  
ns  
VDD = 15 V, ID = 1 A,  
VGS = 10V, RGEN = 6 W  
Q1  
VDD = –10 V, ID = –1 A,  
VGS = –4.5V, RGEN = 6 W  
15  
38  
40  
10  
25  
17  
13  
4
ns  
ns  
Qg  
Q1  
nC  
nC  
nC  
VDS = 15 V, ID = 9.3 A, VGS = 4.5 V  
Qgs  
Qgd  
Q2  
2.5  
5
2.0  
VDS = 15 V, ID = –2.4 A,VGS = –4.5 V  
Drain-Source Diode Characteristics and Maximum Ratings  
IS  
Maximum Continuous Drain-Source Diode Forward Current  
Q1  
Q2  
Q1  
Q2  
2.1  
–2.1  
1.2  
–1.2  
A
V
VSD  
Drain-Source Diode Forward VGS = 0 V, IS = 2.1 A (Note 2)  
Voltage  
VGS = 0 V, IS = –2.1 A (Note 2)  
Notes:  
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of  
the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design.  
a) 50°C/W when  
mounted on a  
1 in pad of 2 oz  
b) 105°C/W when  
mounted on a 0.04  
in2 pad of 2 oz  
copper  
c) 125°C/W when mounted on a  
minimum pad.  
2
copper  
Scale 1 : 1 on letter size paper  
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%  
FDS4501H Rev C(W)  
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