Typical Characteristics: Q2
4
3.5
3
15
VGS = -4.5V
-2.5V
-3.0V
12
VGS = -1.5V
-2.0V
9
2.5
2
-1.8V
-1.8V
6
-2.0V
1.5
1
-2.5V
-3.0V
3
0
-1.5V
-4.5V
0.5
0
3
6
9
12
15
0
0.5
1
1.5
2
2.5
150
3
-ID, DRAIN CURRENT (A)
-VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.14
0.12
0.1
1.5
1.4
ID = -1.2 A
ID = -2.4A
VGS = -4.5V
1.3
1.2
1.1
1
0.08
0.06
0.04
0.02
TA = 125oC
0.9
0.8
0.7
TA = 25oC
-50
-25
0
25
50
75
100
125
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
15
12
9
VGS = 0V
VDS = - 5V
TA = 125oC
25oC
10
1
-55oC
TA = 125oC
25oC
0.1
6
-55oC
0.01
0.001
3
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
0.5
1
1.5
2
2.5
-V SD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4501H Rev C(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
