FDN360P
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -2.0A
8
V
DS
= -5.0V
6
-10V
(continued)
600
f=1MHz
V
GS
= 0V
480
CAPACITANCE (pF)
C
iss
360
-15V
4
240
C
oss
C
rss
2
120
0
0
2
4
6
8
10
0
0
6
12
18
24
30
Q
g
, GATE CHARGE (nC)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
50
SINGLE PULSE
R
θ
JA
=270 C/W
T
A
=25 C
POWER (W)
30
o
o
-I
D
, DRAIN CURRENT (A)
10
R
DS(ON)
Limit
100
µ
s
1ms
40
1
1s
0.1
V
GS
= -10V
SINGLE PULSE
R
θ
JC
=270 C/W
T
A
=25 C
0.01
0.1
1
o
o
10ms
100ms
10s
DC
20
10
0
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P(pk)
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 270 °C/W
t
1
t
2
T
J
- T
A
= P * R
θ
JA (t)
Duty Cycle, D = t
1
/t
2
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
300
0.001
0.0001
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
FDN360P Rev. D
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
