FDN360P
February 1999
FDN360P
Single P-Channel PowerTrench
TM
MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Features
•
-2 A, -30 V. R
DS(on)
= 0.080
Ω
@ V
GS
= -10 V
R
DS(on)
= 0.125
Ω
@ V
GS
= -4.5 V.
•
•
•
•
Low gate charge (5nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
Applications
•
•
•
DC/DC converter
Load switch
Motor drives
D
D
S
SuperSOT -3
TM
G
T
A
= 25°C unless otherwise noted
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
stg
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
Parameter
Ratings
-30
(Note 1a)
Units
V
V
A
W
°
C
±
20
-2
-20
0.5
0.46
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°
C/W
°
C/W
Package Outlines and Ordering Information
Device Marking
360
Device
FDN360P
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©1999
Fairchild Semiconductor Corporation
FDN360P Rev. D
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
