FDN360P
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
V
GS
= 0 V, I
D
= -250
µ
A
I
D
= -250
µ
A, Referenced to
25
°
C
V
DS
= -24 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
Min
Typ
Max Units
Off Characteristics
BV
DSS
∆
BV
DSS
∆
T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
(Note 2)
-30
20
-1
100
-100
V
mV/
°
C
µ
A
nA
nA
On Characteristics
V
GS(th)
∆
V
GS(th)
∆
T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= -250
µ
A
I
D
= -250
µ
A, Referenced to
25
°
C
V
GS
= -10 V, I
D
= -2 A
V
GS
= -10 V, I
D
= -2 A, T
J
=125
°
C
V
GS
= -4.5 V, I
D
= -1.5 A
V
GS
= -10 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -2 A
-1
-1.8
-4
0.060
0.080
0.095
-3
V
mV/
°
C
0.080
0.136
0.125
Ω
I
D(on)
g
FS
-20
5.5
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
420
140
60
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= -15 V, I
D
= -1 A,
V
GS
= -10 V, R
GEN
= 6
Ω
9
8
18
6
18
16
29
12
7
ns
ns
ns
ns
nC
nC
nC
V
DS
= -15 V, I
D
= -2 A,
V
GS
= -10 V,
5
1.7
1.8
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= -0.42 A
(Note 2)
-0.42
-0.75
-1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R
θJC
is guaranteed by design while R
θJA
is determined by the user's board design.
a) 250°C/W when
mounted on a 0.02 in
2
Pad of 2 oz. Cu.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
b) 270°C/W when
mounted on a 0.001 in
2
pad of 2 oz. Cu.
FDN360P Rev. D
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
