FDN360P
Typical Characteristics
20
-6.0V
-5.0V
-4.5V
12
-4.0V
8
-3.5V
4
-3.0V
0
0
1
2
3
4
5
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -10V
-I
D
, DRAIN CURRENT (A)
16
2.5
2
V
GS
= -4.0V
1.5
-4.5V
-5.0V
-6.0V
-7.0V
1
-10V
0.5
0
4
8
12
16
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
1.3
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.25
R
DS(ON)
, ON RESISTANCE (OHM)
I
D
= -1.0A
0.2
I
D
= -2.0A
V
GS
= -10V
1.2
1.1
0.15
1
0.1
T
J
=125 C
25 C
o
o
0.9
0.05
0.8
-50
-25
0
25
50
75
100
o
125
150
0
2
3
4
5
6
7
8
9
10
T
J
, JUNCTION TEMPERATURE ( C)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
10
V
DS
= -5V
-I
D
, DRAIN CURRENT (A)
8
25 C
6
o
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
-I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
10
T
J
=-55 C
o
125 C
o
1
T
J
=125 C
25 C
-55 C
o
o
o
4
0.1
2
0.01
0
1
2
3
4
5
0.001
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-V
SD
, BODY DIODE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDN360P Rev. D
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
