Typical Characteristics
200
100
60
50
40
100µs
30
OPERATION IN THIS AREA
LIMITED BY RDS(ON)
10
o
o
1ms
T
= 175 C
T
= 25 C
20
10
0
J
J
10ms
DC
TC = 25oC
1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1
10
100
1000
VSD, SOURCE TO DRAIN VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Source to Drain Diode Forward Voltage
Figure 8. Maximum Safe Operating Area
35
30
25
20
15
10
5
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (°C)
Figure 9. Maximum Drain Current vs Case Temperature
1.0
0.1
0.50
0.20
0.10
0.05
t1
PD
t2
0.02
0.01
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
10
0.01
10
-5
-4
-3
-2
-1
0
10
10
10
10
t1, RECTANGULAR PULSE DURATION (s)
Figure 10. Normalized Maximum Transient Thermal Impedance
©2002 Fairchild Semiconductor Corporation
FDH34N40 Rev. A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
