Typical Characteristics
200
100
200
100
o
o
T
= 25 C
T
V
= 175 C
C
C
V
DESCENDING
DESCENDING
GS
GS
10V
7V
6.5V
6V
5.5V
5V
10V
6.5V
6V
5.5V
5V
10
PULSE DURATION = 80
µs
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
10
1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0
100
80
60
40
20
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 80V
o
o
T
= 175 C
T
= 25 C
J
J
VGS = 10V, ID = 17A
100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
-50
-25
0
25
50
75
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Transfer Characteristics
Figure 4. Normalized Drain To Source On
Resistance vs Junction Temperatrue
5000
1000
15
ID = 34A
CISS
200V
10
320V
80V
COSS
100
5
0
CRSS
VGS = 0V, f = 1MHz
10
1
10
100
0
10
20
30
40
50
60
70
80
90
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Capacitance vs Drain To Source Voltage
Figure 6. Gate Charge Waveforms For Constant
Gate Current
©2002 Fairchild Semiconductor Corporation
FDH34N40 Rev. A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
