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FDH34N40 参数 Datasheet PDF下载

FDH34N40图片预览
型号: FDH34N40
PDF下载: 下载PDF文件 查看货源
内容描述: 34A , 400V , 0.115 Ohm的N通道开关电源功率MOSFET [34A, 400V, 0.115 Ohm, N-Channel SMPS Power MOSFET]
分类和应用: 开关
文件页数/大小: 6 页 / 175 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
Tape Width  
Quantity  
FDH34N40  
FDH34N40  
TO-247  
Tube  
-
30  
Electrical Characteristics T = 25°C (unless otherwise noted)  
C
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Units  
Statics  
B
Drain to Source Breakdown Voltage  
I
= 250µA, V = 0V  
400  
-
-
-
-
V
VDSS  
D
GS  
V/°C Reference to 25°C  
= 1mA  
B  
/T Breakdown Voltage Temp. Coefficient  
0.4  
VDSS  
J
I
D
r
Drain to Source On-Resistance  
Gate Threshold Voltage  
V
V
V
V
V
= 10V, I = 17A  
-
0.106  
0.115  
4.0  
DS(ON)  
GS  
DS  
DS  
GS  
GS  
D
V
= V , I = 250µA  
2.0  
3.4  
V
GS(th)  
GS  
D
o
= 400V  
T
T
= 25 C  
-
-
-
-
-
-
25  
C
C
I
I
Zero Gate Voltage Drain Current  
Gate to Source Leakage Current  
µA  
nA  
DSS  
o
= 0V  
=150 C  
250  
±100  
= ±20V  
GSS  
Dynamics  
g
Forward Transconductance  
Total Gate Charge at 10V  
Gate to Source Gate Charge  
Gate to Drain MillerCharge  
Turn-On Delay Time  
Rise Time  
V
= 50V, I = 17A  
15  
-
-
57  
-
68  
20  
22  
-
S
fs  
DS  
D
Q
Q
Q
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
g(TOT)  
V
V
= 10V  
= 320V  
= 34A  
GS  
-
17  
gs  
DS  
I
D
-
18  
gd  
t
t
t
t
-
16  
d(ON)  
V
I
= 200V  
= 34A  
= 4.3Ω  
= 5.88Ω  
DD  
-
72  
-
r
D
R
R
Turn-Off Delay Time  
Fall Time  
-
42  
-
G
D
d(OFF)  
f
-
58  
-
C
C
C
Input Capacitance  
-
3370  
460  
29.5  
-
ISS  
V
= 25V, V = 0V  
GS  
DS  
Output Capacitance  
Reverse Transfer Capacitance  
-
-
OSS  
RSS  
f = 1MHz  
-
-
Avalanche Characteristics  
E
Single Pulse Avalanche Energy (Note 2)  
Avalanche Current  
2312  
-
-
-
-
mJ  
A
AS  
I
34  
AR  
Drain-Source Diode Characteristics  
Continuous Source Current  
(Body Diode)  
D
S
MOSFET symbol  
showing the  
integral reverse  
p-n junction diode.  
I
-
-
-
-
34  
A
A
S
G
Pulsed Source Current (Note 1)  
(Body Diode)  
I
136  
SM  
V
Source to Drain Diode Voltage  
Reverse Recovery Time  
I
I
I
= 34A  
-
-
-
0.9  
445  
7.16  
1.2  
534  
8.6  
V
SD  
SD  
SD  
SD  
t
= 34A, dI /dt = 100A/µs  
ns  
µC  
rr  
SD  
Q
Reverse Recovered Charge  
= 34A, dI /dt = 100A/µs  
SD  
RR  
Notes:  
1: Repetitive rating; pulse width limited by maximum junction temperature  
2: Starting T = 25°C, L = 4mH, I = 34A  
J
AS  
©2002 Fairchild Semiconductor Corporation  
FDH34N40 Rev. A  
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