FSDH321, FSDL321
Electrical Characteristics (Control Part) (Continued)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min. Typ. Max.
Unit
UVLO SECTION
Start Threshold Voltage
Stop Threshold Voltage
OSCILLATOR SECTION
Initial Accuracy
Frequency Modulation
Initial Accuracy
V
V
V
V
=GND
=GND
11
7
12
8
13
9
V
V
START
FB
FB
STOP
F
F
F
F
90
±2.5
45
±1.0
-
100
±3
50
±1.5
±5
67
110
±3.5
55
±2.0
±10
72
OSC
FSDH321
FSDL321
kHz
kHz
MOD
OSC
Frequency Modulation
Frequency Change With Temperature (2)
MOD
∆F/∆T
-25°C ≤ Ta ≤ +85°C
FSDH321
FSDL321
%
%
%
62
71
Maximum Duty Cycle
Dmax
77
83
FEEDBACK SECTION
Feedback Source Current
Shutdown Feedback Voltage
Shutdown Delay Current
BURST MODE SECTION
I
Ta=25°C, Vfb = 0V
Ta=25°C, Vfb = 4V
0.70
5.5
3.5
0.90
6.0
5.0
1.1
6.5
6.5
mA
V
µA
FB
V
SD
DELAY
I
V
V
0.4
0.25
-
0.5
0.35
150
0.6
0.45
-
V
V
mV
BURH
Burst Mode Voltage
Tj = 25°C
BURL
Hysteresis
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit(3)
ILIM
Tj = 25°C
Tj = 25°C
0.60
-
0.70
600
0.80
-
A
ns
Current Limit Delay(1)
T
CLD
SOFT START SECTION
Soft Start Time
T
Vfb = 4V
10
15
20
ms
SS
PROTECTION SECTION
Thermal Shutdown Temperature (1)
Over Voltage Protection
TOTAL STANDBY CURRENT SECTION
Startup Charging Current
T
-
125
18
145
19
-
20
°C
V
SD
V
OVP
I
V
V
=0V
0.7
1
0.85
3
1.0
5
mA
mA
CH
CC
CC
Operating Supply Current
(Control Part Only)
I
= 14V, Vfb = 0V
OP
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
3. di/dt = 250mA/uS
6
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
