Typical Electrical Characteristics
(continued)
g
FS
, TRANSCONDUCTANCE (SIEMENS)
0.8
2
TJ = 25°C
125°C
0.4
I
D
, DRAIN CURRENT (A)
1
0.5
RD
O
S(
N)
Lim
it
10
1m
10
ms
s
0u
s
0.6
0.2
0.1
0.05
10
1s
10
s
DC
0m
s
V
GS
= 20V
SINGLE PULSE
0.01
0.005
0.2
V
DS
= 10V
0
0
0.3
0.6
0.9
I
D
, DRAIN CURRENT (A)
1.2
1.5
T
A
= 25°C
1
V
DS
5
10
20
50
100
, DRAIN-SOURCE VOLTAGE (V)
Figure 13. Transconductance Variation with Drain
Current and Temperature.
Figure 14. Maximum Safe Operating Area
1
TRANSIENT THERMAL RESISTANCE
0.5
0.2
0.1
0.05
D = 0.5
0.2
0.1
0.05
0.02
0.01
P(pk)
r(t), NORMALIZED EFFECTIVE
R
θJA
(t) = r(t) * R
θJA
o
R
= 350 C/W
θJA
0.01
Single Pulse
t
1
t
2
0.002
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
100
300
Figure 15. Transient Thermal Response Curve
BSS138 Rev. A1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
