Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 50 V, V
GS
= 0 V
T
J
=125°C
V
DS
= 30 V, V
GS
= 0 V
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
g
FS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
I
S
I
SM
V
SD
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
(Note 1)
50
0.5
5
100
100
-100
V
µA
µA
nA
nA
nA
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 1 mA
V
GS
= 10 V, I
D
= 0.22 A
V
GS
= 4.5 V, I
D
= 0.22 A
V
DS
= 10 V, I
D
= 0.22 A
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
0.12
0.8
1.3
0.81
1.16
0.45
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
1.6
3.5
6
V
Ω
S
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
30
15
7.5
60
25
10
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note 1)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
V
DD
= 30 V, I
D
= 0.29 A,
V
GS
= 10 V, R
GEN
= 50
Ω
8
12
16
22
ns
ns
ns
ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Source Current
Maximum Pulse Source Current
(Note 1)
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.44 A
0.8
0.22
0.88
1.4
A
A
V
Note:
1. Pulse Test: Pulse Width < 300
µ
s, Duty Cycle < 2.0%.
BSS138 Rev. A1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
