Typical Electrical Characteristics
(continued)
BV
DSS
, NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
1.12
1.1
1.08
1.06
1.04
1.02
1
0.98
0.96
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
1
I
S
, REVERSE DRAIN CURRENT (A)
I
D
= 250µA
V
GS
= 0V
0.1
TJ = 125°C
25°C
0.01
0.001
0.2
0.4
0.6
0.8
1
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
100
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 220mA
8
V
DS
= 8.0V
50
CAPACITANCE (pF)
C iss
C oss
6
20
4
10
f = 1 MHz
V
GS
= 0V
C rss
2
5
0.1
0.2
1
2
5
10
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.5
50
0
0
0.2
0.4
0.6
0.8
1
Q
g
, GATE CHARGE (nC)
1.2
1.4
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
V
DD
t
d (o n )
t
on
t
off
t
r
90%
t
d(off)
90%
V
IN
D
R
L
V
OUT
V
O U T
10%
t
f
V
GS
R
GEN
10%
INVERTED
G
DUT
90%
S
V
IN
10%
50%
50%
PULSE W IDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
BSS138 Rev. A1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
