KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/
Electrical Characteristics (SFET Part; Continued)
(Ta = 25°C unless otherwise specified)
Parameter
KA5S1265
Symbol
Conditions
Min. Typ. Max. Unit
Drain-source breakdown voltage
BVDSS
IDSS
VGS=0V, ID=50µA
650
-
-
-
-
V
VDS=Max., Rating, VGS=0V
50
µA
Zero gate voltage drain current
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
-
-
200
µA
Static drain-source on resistance(1)
Forward transconductance(1)
Input capacitance
RDS(on)
gfs
VGS=10V, ID=6.0A
VDS=50V, ID=4.0A
-
0.72
-
0.9
Ω
5.7
-
-
-
-
-
-
-
-
S
Ciss
Coss
Crss
td(on)
tr
-
-
-
-
-
-
-
2700
300
61
VGS=0V, VDS=25V,
f = 1MHz
Output capacitance
Reverse transfer capacitance
Turn on delay time
pF
nS
VDD=0.5BVDSS, ID=12.0A
(MOSFET switching
time are essentially
independent of
18
Rise time
37
Turn off delay time
td(off)
tf
88
Fall time
operating temperature)
36
Total gate charge
(gate-source+gate-drain)
VGS=10V, ID=12.0A,
VDS=0.5BVDSS(MOSFET
Switching time are
Essentially independent of
Operating temperature)
Qg
-
-
140
Gate-source charge
Qgs
Qgd
-
-
20
69
-
-
nC
Gate-drain (Miller) charge
Note:
1. Pulse Test : Pulse width ≤ 300uS, Duty Cycle ≤ 2%
2.MOSFET Switching Time are Essentially Independent of Operating Temperature
1
3. S = ---
R
7
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
