KA5X03XX-SERIES
Typical Performance Characteristics (Continued)
(KA5H0380R, KA5M0380R, KA5L0380R)
1
1
10
10
V
GS
Top: 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
Bottom:4.5V
0
0
10
10
150 oC
@Notes:
1. 300µs PulseTest
2. TC = 25oC
@ Notes:
1. VDS = 30 V
2. 300µs PulseTest
25 oC
-25 oC
-1
-1
10
10
0
1
10
10
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. Output Characteristics
Figure 2. Thansfer Characteristics
Fig3. On-Resistance vs. Drain Current
8
7
6
5
4
3
2
1
0
10
Vgs=10V
Vgs=20V
1
25 oC
150 oC
@ Notes:
1. VGS = 0V
2. 300µs PulseTest
℃
@Note: Tj=25
0.1
0
1
2
3
4
0.4
0.6
0.8
1.0
VSD, Source-Drain Voltage [V]
ID,Drain Current
Figure 3. On-Resistance vs. Drain Current
Figure 4. Source-Drain Diode Forward Voltage
1000
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
10
900
800
700
600
500
400
300
200
100
0
V
DS=160V
C
V
DS=400V
8
6
4
2
0
V
DS=640V
C
iss
Coss
@Note: ID=3.0A
25
C
rss
0
1
0
5
10
15
20
30
10
10
VDS, Drain-Source Voltage [V]
QG,Total Gate Charge [nC]
Figure 5. Capacitance vs. Drain-Source Voltage
Figure 6. Gate Charge vs. Gate-Source Voltage
9
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
