KA5X03XX-SERIES
Typical Performance Characteristics(SenseFET part)
(KA5H0365R, KA5M0365R, KA5L0365R)
10
10
VGS
Top: 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
Bottom:4.5V
150 oC
1
1
o
-25 C
25 oC
@Notes:
@Notes:
1. VDS = 30V
1. 300 s Pulse Test
µ
2. TC = 25o
C
2. 300 s PulseTest
µ
0.1
0.1
2
4
6
8
10
1
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
Figure 1. Output Characteristics
7
6
5
4
3
2
1
0
Vgs=10V
1
0.1
Vgs=20V
150oC
25 oC
@Notes :
1. VGS=0V
2. 300µs PulseTest
℃
@Note : Tj=25
0.01
0
1
2
3
4
5
0.4
0.6
0.8
1.0
1.2
ID,Drain Current [A]
V , Source-Drain Voltage [V]
SD
Figure 3. On-Resistance vs. Drain Current
Figure 4. Source-Drain Diode Forward Voltage
700
10
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
600
500
400
300
200
100
0
V
DS=130V
VDS=320V
VDS=520V
C
8
6
4
2
0
C
iss
Coss
@Note: ID=3.0A
20
C
rss
0
1
0
5
10
15
25
10
10
QG,Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge vs. Gate-Source Voltage
Figure 5. Capacitance vs. Drain-Source Voltage
7
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
