KA5X03XX-SERIES
Typical Performance Characteristics(SenseFET part) (Continued)
(KA5M0365RN, KA5L0365RN)
1
10
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
101
100
10-1
Bottom : 5.5 V
0
10
℃
150
℃
-55
℃
25
-1
10
※
Note :
μ
※
Note
1. 250 s Pulse Test
2. TC = 25
1. V = 50V
DS μ
℃
2. 250 s Pulse Test
0
10
1
10
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
101
100
10-1
VGS = 10V
VGS = 20V
℃
150
℃
25
※
Note :
1. V = 0V
2. 250 s Pulse Test
GS μ
※
℃
Note : T = 25
J
0
1
2
3
4
5
6
7
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance vs. Drain Current
Figure 4. Source-Drain Diode Forward Voltage
700
12
10
8
Ciss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
Crss = Cgd
C
600
500
400
300
200
100
VDS = 130V
C
C
iss
V
= 325V
DS
VDS = 520V
oss
6
C
※
Note ;
rss
4
1. VGS = 0 V
2. f = 1 MHz
2
※
Note : ID = 3.0 A
0
10-1
100
101
0
2
4
6
8
10
12
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance vs. Drain-Source Voltage
Figure 6. Gate Charge vs. Gate-Source Voltage
11
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
