KA5X03XX-SERIES
Electrical Characteristics (SenseFET Part)
(Ta = 25°C unless otherwise specified)
Parameter
Symbol
Condition
Min. Typ. Max. Unit
KA5M0365RN, KA5L0365RN
Drain-Source Breakdown Voltage
BV
DSS
V
V
=0V, I =50µA
650
-
-
-
-
V
GS
DS
D
=Max. Rating, V =0V
GS
50
µA
Zero Gate Voltage Drain Current
I
DSS
V
V
=0.8Max. Rating,
DS
-
-
200
µA
=0V, T =125°C
GS
C
Static Drain-Source on Resistance (Note)
Forward Transconductance (Note)
Input Capacitance
R
V
V
=10V, I =0.5A
D
-
3.6
-
4.5
Ω
DS(ON)
GS
DS
gfs
=50V, I =0.5A
D
2.0
-
-
-
-
-
-
-
-
S
Ciss
-
-
-
-
-
-
-
314.9
47
V
=0V, V =25V,
DS
GS
Output Capacitance
Coss
Crss
pF
nS
f=1MHz
Reverse Transfer Capacitance
Turn On Delay Time
9
td(on)
tr
V
=0.5BV
, I =1.0A
DSS
11.2
34
DD
D
(MOSFET switching
time is essentially
independent of
Rise Time
Turn Off Delay Time
td(off)
tf
28.2
32
Fall Time
operating temperature)
Total Gate Charge
(Gate-Source+Gate-Drain)
V
V
=10V, I =1.0A,
D
GS
DS
Qg
11.93
-
=0.5BV
(MOSFET
DSS
switching time is
essentially independent of
operating temperature)
nC
Gate-Source Charge
Qgs
Qgd
-
1.95
6.85
Gate-Drain (Miller) Charge
Note:
1. Pulse test: Pulse width ≤ 300µS, duty ≤ 2%
2.
1
R
S = ---
5
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
