E S I
E S I
Excel Semiconductor inc.
Table 1. ES29LV160 Device Bus Operations
DQ0
~
DQ7
DQ8~DQ15
Operation
CE# OE# WE# RESET# Addresses
BYTE#
= VIH
BYTE#
= VIL
(Note 1)
Read
Write
L
L
H
L
A
D
D
L
H
H
DQ8~DQ14 = High-Z,
DQ15 = A-1
IN
OUT
OUT
A
H
(Note 3)
High-Z
(Note 3)
High-Z
IN
Vcc+
0.3V
Standby
X
X
Vcc+
0.3V
X
High-Z
Output Disable
Reset
L
H
X
H
X
H
L
X
X
High-Z
High-Z
High-Z
High-Z
X
Sector Protect
(Note 2)
SA,A6=L,
A1=H,A0=L
V
L
L
X
L
H
H
X
L
L
X
L
(Note 3)
(Note 3)
(Note 3)
X
X
X
X
ID
Sector Unprotect
(Note 2)
SA,A6=H,
A1=H,A0=L
In-system
V
V
ID
ID
Temporary Sector
Unprotect
A
(Note 3)
High-Z
IN
SA,A9=V
A6=L,
,
ID
Sector protect
V
H
ID
ID
A9 High-Volt-
age Method
A1=H,A0=L
(Note 3)
(Note 3)
High-Z
SA,A9=V
A6=H,
,
ID
Sector unprotect
V
H
L
L
A1=H,A0=L
Legend: L=Logic Low=V , H=Logic High=V , V =11.5-12.5V, X=Don’t Care, SA=Sector Address, A =Address In, D =Data In,
IL
IH ID
IN
IN
D
=Data Out
OUT
Notes:
1. Addresses are A19:A0 in word mode (BYTE#=V ) , A19:A-1 in byte mode (BYTE#=V ).
IH
IL
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector Pro-
tection and Unprotection” section.
3. D or D
as required by command sequence, data polling, or sector protection algorithm.
IN
OUT
Table 2. Autoselect Codes (A9 High-Voltage Method)
A19 A11
A8
A9 to
A7
A5
to
A2
DQ8~DQ15
Description CE# OE# WE# to
to
A6
A1 A0
DQ7~DQ0
BYTE# BYTE#
A12 A10
= VIH
= VIL
L
L
H
H
VID
VID
X
X
L
L
X
X
L
L
L
X
ManufactureID:ESI
L
L
X
X
X
X
X
4Ah
Device ID:
ES29LV160
H
22h
X
X
X
C4h(T),49h(B)
Sector Protection
Verification
01h(protected)
00h(unprotected)
VID
L
L
H
SA
X
X
L
X
H
L
Legend: T= Top Boot Block, B = Bottom Boot Block, L=Logic Low=V , H=Logic High=V , SA=Sector Address, X = Don’t care
IL
IH
10
Rev. 1C Jan 5 , 2006
ES29LV160D
EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
