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EM68C16CWQG-18IH 参数 Datasheet PDF下载

EM68C16CWQG-18IH图片预览
型号: EM68C16CWQG-18IH
PDF下载: 下载PDF文件 查看货源
内容描述: [64M x 16 bit DDRII Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 60 页 / 1276 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM68C16CWQG  
Figure 10. OCD adjust mode  
OCD calibration mode exit  
OCD adjust mode  
EMRS  
EMRS  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
CMD  
CK#  
CK  
WL  
WR  
DQS#  
DQS_in  
tDS tDH  
DT0  
VIH(dc)  
VIH(ac)  
DQ_in  
DM  
DT1  
DT2  
DT3  
VIL(ac)  
VIL(dc)  
NOTE 1: For proper operation of adjust mode, WL = RL - 1 = AL + CL - 1tCK and tDS /tDH should be met as shown in the figure.  
NOTE 2: For input data pattern for adjustment, DT0-DT3 is a fixed order and is not affected by burst type  
(i.e., sequential or interleave)  
Figure 11. ODT update delay timing-tMOD  
NOP  
EMRS  
NOP  
NOP  
NOP  
NOP  
CMD  
CK#  
CK  
ODT  
tIS  
tMOD, max  
Updating  
tAOFD  
tMOD, min  
Rtt  
Old setting  
New setting  
NOTE 1: To prevent any impedance glitch on the channel, the following conditions must be met:  
- tAOFD must be met before issuing the EMRS command.  
- ODT must remain LOW for the entire duration of tMOD window, until tMOD, max is met.  
then the ODT is ready for normal operation with the new setting, and the ODT signal may be raised again to turned  
on the ODT.  
NOTE 2: EMRS command directed to EMR(1), which updates the information in EMR(1)[A6,A2], i.e. Rtt (Nominal).  
NOTE 3: "setting" in this diagram is the Register and I/O setting, not what is measured from outside.  
Rev. 1.2  
35  
Apr. /2016  
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