欢迎访问ic37.com |
会员登录 免费注册
发布采购

EM68C08CWAE-3H 参数 Datasheet PDF下载

EM68C08CWAE-3H图片预览
型号: EM68C08CWAE-3H
PDF下载: 下载PDF文件 查看货源
内容描述: [128M x 8 bit DDRII Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 63 页 / 512 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
 浏览型号EM68C08CWAE-3H的Datasheet PDF文件第25页浏览型号EM68C08CWAE-3H的Datasheet PDF文件第26页浏览型号EM68C08CWAE-3H的Datasheet PDF文件第27页浏览型号EM68C08CWAE-3H的Datasheet PDF文件第28页浏览型号EM68C08CWAE-3H的Datasheet PDF文件第30页浏览型号EM68C08CWAE-3H的Datasheet PDF文件第31页浏览型号EM68C08CWAE-3H的Datasheet PDF文件第32页浏览型号EM68C08CWAE-3H的Datasheet PDF文件第33页  
EtronTech  
EM68C08CWAE  
General notes, which may apply for all AC parameters:  
NOTE 1: DDR2 SDRAM AC timing reference load  
The below figure represents the timing reference load used in defining the relevant timing parameters of the part. It  
is not intended to be either a precise representation of the typical system environment or a depiction of the actual  
load presented by a production tester.  
Figure 6. AC timing reference load  
VDDQ  
DQ  
DQS  
DQS#  
Ouput  
VTT=VDDQ/2  
DUT  
RDQS  
RDQS#  
25ꢀ  
Timing reference  
point  
The output timing reference voltage level for single ended signals is the crosspoint with VTT. The output timing reference  
voltage level for differential signals is the crosspoint of the true (e.g. DQS) and the complement (e.g. DQS#) signal.  
NOTE 2: Slew Rate Measurement Levels  
a) Output slew rate for falling and rising edges is measured between VTT - 250 mV and VTT + 250 mV for single  
ended signals. For differential signals (e.g. DQS – DQS#) output slew rate is measured between DQS – DQS# =  
- 500 mV and DQS – DQS# = + 500 mV. Output slew rate is guaranteed by design, but is not necessarily tested  
on each device.  
b) Input slew rate for single ended signals is measured from VREF (dc) to VIH (ac), min for rising edges and from  
VREF(dc) to VIL(ac),max for falling edges.For differential signals (e.g. CK – CK#) slew rate for rising edges is  
measured from CK – CK# = - 250 mV to CK -CK# = + 500 mV (+ 250 mV to - 500 mV for falling edges).  
c) VID is the magnitude of the difference between the input voltage on CK and the input voltage on CK#, or between  
DQS and DQS# for differential strobe.  
NOTE 3: DDR2 SDRAM output slew rate test load  
Output slew rate is characterized under the test conditions as bellow  
Figure 7. Slew rate test load  
VDDQ  
DQ  
DQS  
DQS#  
Ouput  
VTT=VDDQ/2  
DUT  
RDQS  
RDQS#  
25ꢀ  
Test point  
Rev. 1.3  
29  
Oct. /2015  
 复制成功!