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EM68B16DVAA-6H 参数 Datasheet PDF下载

EM68B16DVAA-6H图片预览
型号: EM68B16DVAA-6H
PDF下载: 下载PDF文件 查看货源
内容描述: 32M ×16的移动DDR同步DRAM ( SDRAM ) [32M x 16 Mobile DDR Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 40 页 / 323 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM68B16DVAA  
EtronTech  
z Auto Refresh  
An Auto Refresh command is issued by having  
,
, and  
held Low with CKE and  
High at  
WE  
CS RAS  
CAS  
the rising edge of the clock (CK). All banks must be precharged and idle for a tRP (min) before the Auto  
Refresh command is applied. The refresh addressing is generated by the internal refresh address counter.  
This makes the address bits Don’t Care during an Auto Refresh command. When the refresh cycle is  
complete, all banks will be in the idle state. A delay between the Auto Refresh command and the next Active  
command or subsequent Auto Refresh command must be greater than or equal to the tRFC (min).  
z Self Refresh  
A Self Refresh command is defined by having  
,
,
and CKE Low with  
High at the rising  
WE  
CS RAS CAS  
edge of the clock (CK). Once the Self Refresh command has been initiated, CKE must be held Low to keep  
the device in Self Refresh mode. During the Self Refresh operation, all inputs except CKE are ignored. The  
clock is internally disabled during Self Refresh operation to reduce power consumption. To exit the Self  
Refresh mode, supply a stable clock input before returning CKE high, assert Deselect or a NOP command,  
and then assert CKE high.  
z Power Down Mode  
The device enters Power Down mode when CKE is brought Low, and it exits when CKE returns High. Once  
the Power Down mode is initiated, all of the receiver circuits except CK and CKE are gated off to reduce  
power consumption. All banks should be in an idle state prior to entering the Precharge Power Down mode  
and CKE should be set high at least tXP prior to an Active command. During Power Down mode, refresh  
operations cannot be performed; therefore the device must remain in Power Down mode for a shorter time  
than the refresh period (tREF) of the device.  
z Deep Power Down  
Deep Power Down achieves maximum power reduction by eliminating the power of the whole memory array  
and surrounding circuitry. Data will not be retained in the memory storage array, the Mode Register, or the  
Extended Mode Register once the device enters Deep Power Down mode.  
This mode is entered by having all banks idle then  
and  
held Low with  
and  
held High at  
CAS  
CS  
WE  
RAS  
the rising edge of the clock, while CKE is Low. This mode is exited by asserting CKE High, applying only  
NOP commands for 200 microseconds, and then continuing with steps 4 through 11 of the Power Up and  
Initialization sequence..  
Etron Confidential  
12  
Rev. 1.0  
Mar. 2009  
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