Et r on Tech
EM669325
4M x 32 LPSDRAM
Absolute Maximum Rating
Symbol
VIN, VOUT
VDD, VDDQ
TOPR
Item
Input, Output Voltage
Rating
Unit
V
- 1.0 ~ +4.6
-1.0 ~ +4.6
-25 ~ +85
- 55~ +150
260
Power Supply Voltage
Operating Temperature
Storage Temperature
V
C
C
C
°
°
°
TSTG
TSOLDER
PD
Soldering Temperature (10s)
Power Dissipation
1.0
W
IOUT
Short Circuit Output Current
50
mA
Note:
Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to
the device.
Recommended D.C. Operating Conditions (Ta = -25~85°C)
Parameter/ Condition
DRAM Core Supply VOLTAGE
I/O Supply Voltage
Symbol
VDD
VDDQ
VIH
Min
2.7
2.7
2.0
-0.3
2.4
Typ
3.0
3.0
2.5
0
Max
Unit
V
Note
1
3.6
3.6
V
1
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Data Output High (Logic 1) Voltage
Data Output High (Logic 1) Voltage
Input Leakage Current
VDDQ+0.3
V
1
VIL
0.8
-
V
1
VOH
VOL
IIL
-
V
1,2,4
1,3,5
-
-
0.4
1.5
V
-1.5
µA
( 0V VIN VDD, All other pins not under
test = 0V )
Note:
1
All voltages are referenced to VSS.
2
3
4
5
IOUT = - 2.0mA
IOUT = + 2.0mA
VIH (max) = 5.6V AC. The overshoot voltage duration is
5ns.
5ns.
VIL (min) =-2.0V AC. The undershoot voltage duration is
Capacitance (VDD = 2.5V, f = 1MHz, Ta = 25°C)
Symbol
CI
Parameter
Input Capacitance
Input/Output Capacitance
Min.
Max.
Unit
pF
5
8
CI/O
6
pF
Note:
These parameters are periodically sampled and are not 100% tested.
Preliminary
15
Rev 0.6
Sep. 2003
ETRON [ ETRON TECHNOLOGY, INC. ]
