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EM669325BG-8G 参数 Datasheet PDF下载

EM669325BG-8G图片预览
型号: EM669325BG-8G
PDF下载: 下载PDF文件 查看货源
内容描述: 4M ×32低功耗SDRAM ( LPSDRAM ) [4M x 32 Low Power SDRAM (LPSDRAM)]
分类和应用: 动态存储器
文件页数/大小: 51 页 / 598 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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Et r on Tech  
EM669325  
4M x 32 LPSDRAM  
Note:  
1
2
Power-up sequence is described in Note 7.  
A.C. Test Conditions  
LVTTL Interface  
Reference Level of Output Signals  
1.4V/1.4V  
Output Load  
Reference to the Under Output Load (B)  
Input Signal Levels (VIH/VIL)  
2.4V/0.4V  
1ns  
Transition Time (Rise and Fall) of Input Signals  
Reference Level of Input Signals  
1.4V  
3.0V  
1.4V  
50Ω  
1.2kΩ  
50Ω  
Z0=  
Output  
Output  
30pF  
30pF  
870Ω  
LVTTL D.C. Test Load (A)  
LVTTL A.C. Test Load (B)  
3. Transition times are measured between VIH and VIL. Transition(rise and fall) of input signals are in a fixed  
slope (1 ns).  
4. tHZ defines the time in which the outputs achieve the open circuit condition and are not at reference levels.  
5. If clock rising time is longer than 1 ns, ( tR / 2 -0.5) ns should be added to the parameter.  
6. Assumed input rise and fall time tT ( tR & tF ) = 1 ns  
If tR or tF is longer than 1 ns, transient time compensation should be considered, i.e., [(tr + tf)/2 - 1] ns  
should be added to the parameter.  
7. Power up Sequence  
Power up must be performed in the following sequence.  
1) Power must be applied to VDD and VDDQ(simultaneously) when all input signals are held "NOP" state  
and both CKE = "H" and DQM = "H." The CLK signals must be started at the same time.  
2) After power-up, a pause of 200µ seconds minimum is required. Then, it is recommended that DQM  
is held "HIGH" (VDD levels) to ensure DQ output is in high impedance.  
3) All banks must be precharged.  
4) Mode Register Set command must be asserted to initialize the Mode register.  
5) A minimum of 2 Auto-Refresh dummy cycles must be required to stabilize the internal circuitry of the  
device.  
Preliminary  
18  
Rev 0.6  
Sep. 2003  
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