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EM639165TS-75 参数 Datasheet PDF下载

EM639165TS-75图片预览
型号: EM639165TS-75
PDF下载: 下载PDF文件 查看货源
内容描述: 8Mega X 16位SDRAM [8Mega x 16bits SDRAM]
分类和应用: 动态存储器
文件页数/大小: 48 页 / 655 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM639165  
[ Write Interrupted by Write ]  
Burst write operation can be interrupted by new write of any bank. Random column access is allowed. WRITE to WRITE  
interval is minimum 1 CLK.  
Write Interrupted by Write (CL=3,BL=4)  
CLK  
Command  
A0-9  
Write Write  
Write  
Yk  
0
Write  
Yl  
Yi  
0
Yj  
0
A10  
0
A11  
BA0,1  
DQ  
00  
00  
10  
00  
Dai0 Daj0 Daj1 Dbk0 Dbk1 Dbk2 Dal0 Dal1 Dal2 Dal3  
[ Write Interrupted by Read ]  
Burst write operation can be interrupted by read of the same or the other bank. Random column access is allowed. WRITE  
to READ interval is minimum 1 CLK.The input data on DQ at the interrupting READ cycle is "don't care".  
Write Interrupted by Read (CL=3,BL=4)  
CLK  
Command  
A0-9  
Write READ  
Write  
READ  
Yi  
0
Yj  
0
Yk  
0
Yl  
0
A10  
A11  
BA0,1  
DQM  
DQ  
00  
00  
10  
00  
Dai0  
Qaj0 Qaj1  
Dbk0 Dbk1  
Qal0  
Preliminary  
Rev 1.0 Feb. 2001  
21  
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