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EM639165TS-75 参数 Datasheet PDF下载

EM639165TS-75图片预览
型号: EM639165TS-75
PDF下载: 下载PDF文件 查看货源
内容描述: 8Mega X 16位SDRAM [8Mega x 16bits SDRAM]
分类和应用: 动态存储器
文件页数/大小: 48 页 / 655 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM639165  
BURST INTERRUPTION [ Read Interrupted by Read ]  
Burstreadoperationcanbeinterrupted bynewreadofanybank. RandomcolumnaccessisallowedREADtoREADinterval  
isminimum1CLK..  
Read Interrupted by Read (BL=4, CL=3)  
CLK  
READ READ  
READ  
Yk  
READ  
Yl  
Command  
A0-9  
Yi  
0
Yj  
0
0
0
A10  
A11  
00  
00  
10  
01  
BA0,1  
DQ  
Qai0 Qaj0 Qaj1 Qbk0 Qbk1 Qbk2 Qal0 Qal1 Qal2 Qal3  
[ Read Interrupted by Write ]  
Burst read operation can be interrupted by write of any bank. Random column access is allowed. In this case, the DQ  
should be controlled adequately by using the DQM to prevent the bus contention. The output is disabled automatically 1  
cycle after WRITE assertion.  
Read Interrupted by Write (BL=4, CL=3)  
CLK  
READ  
Yi  
Write  
Yj  
Command  
A0-9  
0
0
A10  
A11  
00  
00  
BA0,1  
DQM  
Qai0  
Q
D
Daj0 Daj1 Daj2 Daj3  
DQM control Write control  
Preliminary  
Rev 1.0 Feb. 2001  
18  
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