欢迎访问ic37.com |
会员登录 免费注册
发布采购

EM639165TS-75 参数 Datasheet PDF下载

EM639165TS-75图片预览
型号: EM639165TS-75
PDF下载: 下载PDF文件 查看货源
内容描述: 8Mega X 16位SDRAM [8Mega x 16bits SDRAM]
分类和应用: 动态存储器
文件页数/大小: 48 页 / 655 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
 浏览型号EM639165TS-75的Datasheet PDF文件第20页浏览型号EM639165TS-75的Datasheet PDF文件第21页浏览型号EM639165TS-75的Datasheet PDF文件第22页浏览型号EM639165TS-75的Datasheet PDF文件第23页浏览型号EM639165TS-75的Datasheet PDF文件第25页浏览型号EM639165TS-75的Datasheet PDF文件第26页浏览型号EM639165TS-75的Datasheet PDF文件第27页浏览型号EM639165TS-75的Datasheet PDF文件第28页  
EM639165  
[Read with Auto-Precharge Interrupted by Read to another Bank]  
Burst write with auto-precharge can be interrupted by write or read to another bank. Next ACT command can be issued after  
tRP. Auto-prechargeinterruptionbyacommandtothesamebankisinhibited.  
Read Interrupted by Read to another bank (CL=2,BL=4)  
CLK  
Command  
A0-9,11  
A10  
Read  
Ya  
1
Read  
BL  
ACT  
Xa  
tRP  
Yb  
0
Xa  
BA0-1  
DQ  
00  
10  
00  
Qa0  
Qa1  
Qb0  
Qb1  
Qb2  
activate  
Qb3  
auto-precharge  
interrupted  
[Full Page Burst]  
Full page burst length is available for only the sequential burst type. Full page burst read or write is repeated untill a Precharge  
oraBurstTerminatecommandisissued. Incaseofthefullpageburst, areadorwritewithauto-prechargecommandisillegal.  
[Single Write]  
When single write mode is set, burst length for write is always one, independently of Burst Length defined by (A2-0).  
Preliminary  
Rev 1.0 Feb. 2001  
24  
 复制成功!